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Chemical Vapor Deposition

Volumn 11, Issue 6-7, 2005, Pages 289-291

CVD of titanium oxide thin films from the reaction of tetrakis(dimethylamido)titanium with oxygen

(4) Woods, Jaime B a Beach, David B b Nygren, Cara L a Xue, Zi Ling a

a UNIVERSITY OF TENNESSEE (United States)

b OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRIC CURRENTS; FILM PREPARATION; INSULATING MATERIALS; OXYGEN; PERMITTIVITY; REACTION KINETICS; SILICON WAFERS; TITANIUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT GATE INSULATING MATERIALS; DYNAMIC RANDOM ACCESS MEMORIES (DRAM); METAL-INSULATOR-METAL (MIM) CAPACITOR; SILICATE THIN FILMS;

THIN FILMS;

EID: 22944487280 PISSN: 09481907 EISSN: None Source Type: Journal
DOI: 10.1002/cvde.200504205 Document Type: Article

Times cited : (24)

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