Remote plasma enhanced-metal organic chemical vapor deposition of zirconium oxide / silicon oxide alloy, (ZrO2)r-(SiO2)1-x (x < 0.5), thin films for advanced high-K gate dielectrics

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 343-348

  Wolfe, D ^a   Flock, K ^a   Themen, R ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BONDING; ELECTRON TRANSITIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL VARIABLES MEASUREMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON COMPOUNDS; ZIRCONIA;

BAND TO BAND TRANSITIONS; HIGH GATE DIELECTRICS; OPTICAL ABSORPTION MEASUREMENT;

DIELECTRIC MATERIALS;

EID: 0033339404     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (11)

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