A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 87-90

  Charpentier, L ^a   Baillet, F ^c   Chaussende, D ^b   Pernot, E ^a   Pons, M ^c   Madar, R ^a  

^a Grenoble INP Phelma   (France)

^b SAVOIE TECHNOLAC   (France)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

Bulk; Chemical Vapor Deposition; Physical Vapor Transport; Silicon Carbide; Sublimation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GRAPHITE; MICROSCOPIC EXAMINATION; SILICON CARBIDE; SUBLIMATION; X RAY DIFFRACTION;

PRECURSORS;

POLYCRYSTALLINE MATERIALS;

EID: 0242581517     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.87     Document Type: Conference Paper

References (4)

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2. A. Pisch, A.M. Feraria, C. Chatillon, E. Blanquet, M. Pons, C.Bernard, M. Anikin, R. Madar, Mat.Sci.Forum, Vol 338-342, (2000) p 91-94.
3. D. Chaussende, F. Baillet et al., this conference.
4. F.Baillet, D. Chaussende et al., this conference.