Optimization of 1.3 μm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 220-226

  Tangring I ^a   Wang, S M ^a   Sadeghi, M ^a   Gu, Q F ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

A1. Metamorphic growth; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL FIBERS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

METAMORPHIC GROWTH; OPTICAL QUALITY; PHOTOLUMINESCENCE INTENSITY; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 22144456775     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.019     Document Type: Article

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