High-quality 1.3 μm GaInNAs single quantum well lasers grown by MBE

Electronics Letters

Volumn 40, Issue 21, 2004, Pages 1338-1339

  Wang, X D ^a   Wang, S M ^a   Wei, Y Q ^a   Sadeghi, M ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CLADDING LAYERS; SPECTRUM ANALYZER; TENSILE STRAIN; WAVELENGTH;

GALLIUM COMPOUNDS;

EID: 7544249710     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046557     Document Type: Article

References (8)

1. Kondow, M., Kitatani, T., Nakatsuka, S., Larson, M.C., Nakahara, K., Yazawa, Y., Okai, M., and Uomi, K.: 'GaInNAs: a novel material for longwavelength semiconductor lasers', IEEE J. Sel. Top. Quantum Electron., 1997, 3, pp. 719-730
2. Livsits, D.A., Egorov, A., and Riechert, H.: '8 W continuous-wave operation of InGaAsN lasers at 1.3 μm', Electron. Lett., 2000, 36, pp. 1381-1382
3. Li, W., Jouhti, T., Peng, Ch.S., Konttinen, J., Laukkanen, P., Pavelescu, E.M., Dumitrescu, M., and Pessa, M.: 'Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum well lasers grown by molecular-beam epitaxy', Appl. Phys. Lett., 2001, 79, pp. 3386-3388
4. Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., and Harris, J.S., Jr.: 'Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operation out to 1.4 μm', IEEE Photonics Technol. Lett., 2002, 14, pp. 591-593
5. Egorov, A.Yu., Bernklau, D., Livsits, D., Ustinov, V., Alferov, Zh.I., and Riechert, H.: 'High power CW operation of InGaAsN lasers at 1.3 μm', Electron Lett., 2003, 39, pp. 1643-1644
6. Vukusic, J., Modh, P., Larsson, A., Hammar, M., Mogg, S., Christiansson, U., Oscarsson, V., Odling, E., Malmquist, J., Ghisoni, M., Gong, P., Griffiths, E., and Joel, A.: 'MOVPE-grown GaInNAs VCSELs at 1.3 μm with conventional mirror design approach', Electron. Lett., 2003, 39, pp. 662-664
7. Tansu, N., and Mawst, L.J.: 'Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31) quantum-well lasers', IEEE Photonics Technol. Lett., 2002, 14, pp. 444-446
8. Tansu, N., Kirsch, N.J., and Mawst, J.: 'Low-thrshold-current-desnsity 1300-nm dilute-nitride quantum well lasers', Appl. Phys. Lett., 2002, 81, pp. 2523-2525