Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors on GaAs with InxGa1-xP graded buffer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2119-2122

  Yuan, K ^a   Radhakrishnan, K ^a   Zheng, H Q ^a   Ng, G I ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL MICROSCOPY; PHOTOSENSITIVITY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

HALL MEASUREMENT; HIGH-RESOLUTION X-RAY DIFFRACTION; INDIUM ALUMINUM ARSENIDE; LATTICE MISMATCH; NORMARSKY INTERFERENCE OPTICAL MICROSCOPY; SOLID-SOURCE MOLECULAR BEAM EPITAXY; STRAIN RELAXATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035519198     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1415516     Document Type: Article

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