Molecular beam epitaxy growth and characterization of InxGa1 - xAs (0.57 ≤ x ≤ 1) on GaAs using InAlAs graded buffer

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1016-1021

  Wang, S M ^a   Karlsson, C ^a   Rorsman, N ^a   Bergh, M ^a   Olsson, E ^a   Andersson, T G ^a   Zirath, H ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

GaAs; InAlAs graded buffer; InGaAs; MBE

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; SURFACE ROUGHNESS; THERMAL EFFECTS; TRANSPORT PROPERTIES;

ELECTRON MOBILITY; GRADED BUFFERS; RESIDUAL STRAIN;

SEMICONDUCTING FILMS;

EID: 0031141890     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00892-5     Document Type: Article

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