Ion channeling studies of GaN layers on c-oriented sapphire

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 1248-1252

  Hollander B ^a   Mantl, S ^a   Mayer, M ^b   Kirchner, C ^b   Pelzmann, A ^b   Kamp, M ^b   Christiansen, S ^c   Albrecht, M ^c   Strunk, H P ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF ULM   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

DECHANNELING; GALLIUM NITRIDES; ION CHANNELING; LATTICE MISMATCH; THERMAL EXPANSION COEFFICIENT;

SEMICONDUCTING FILMS;

EID: 0032020667     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00836-7     Document Type: Article

References (7)

1. S.J. Pearton, C. Kuo, MRS Bull. 22 (1997) 17.
2. M. Lesczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J.M. Baranowski, C.T. Foxon, T.S. Cheng, Appl. Phys. Lett. 69 (1996) 73.
3. S. Nakamura, T. Mukai, M. Senoh, J. Appl. Phys. 76 (1994) 8189.
4. M. Kamp et al., Mat. Res. Soc. Symp. Proc. 395 (1996) 135.
5. A. Pelzmann, M. Mayer, C. Kirchner, D. Sowada, T. Rotter, M. Kamp, K.J. Ebeling, S. Christiansen, M. Albrecht, H.P. Strunk, B. Holländer, S. Mantl, Mat. Res. Soc. Internet J. Nitride Semicond. Res. 1 (1997) art. 40, http://nsr.mij.mrs.org.
6. J.W. Mayer, E. Rimini (Eds.), Ion Beam Handbook for Material Analysis, Academic Press, New York, 1977.
7. L.C. Feldman, J.W. Mayer, S.T. Picraux, Materials Analysis by Ion Channeling, Academic Press, New York, 1982, p. 88.