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Journal of Applied Physics

Volumn 84, Issue 10, 1998, Pages 5828-5830

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

(12) Eckey, L a Von Gfug, U a Holst, J a Hoffmann, A a Kaschner, A a Siegle, H a Thomsen, C a Schineller, B b Heime, K b Heuken, M c Schon O c Beccard, R c

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b RWTH AACHEN UNIVERSITY (Germany)

c AIXTRON AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001561943 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.368853 Document Type: Article

Times cited : (97)

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