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Volumn , Issue , 2004, Pages 653-658

Over 500 GHz InP Heterojunction Bipolar Transistors

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; NATURAL FREQUENCIES; SCANNING ELECTRON MICROSCOPY; SIGNAL PROCESSING; THRESHOLD VOLTAGE;

EID: 21644486120     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (20)
  • 2
    • 33644582108 scopus 로고    scopus 로고
    • Performance of InP/InGaAs heterojunction bipolar transistors for 40Gb/s OEIC applications
    • S.C. Shen, D.C. Caruth, and M. Feng, "Performance of InP/InGaAs Heterojunction Bipolar Transistors For 40Gb/s OEIC Applications," 2002 GaAs MANTECH Conference Digest of Papers, pp. 22 - 25, 2002.
    • (2002) 2002 GaAs MANTECH Conference Digest of Papers , pp. 22-25
    • Shen, S.C.1    Caruth, D.C.2    Feng, M.3
  • 6
    • 0036478687 scopus 로고    scopus 로고
    • Ultrahigh performance staggered lineup ("Type-II") InP/GaAsSb/InP NpN double heterojunction bipolar transistors
    • C. Bolognesi, M.W. Dvorak, N. Matine, O.J. Pitts, and S.P. Watkins, "Ultrahigh Performance Staggered Lineup ("Type-II") InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors," Jpn. J. Appl. Phys., Vol. 41, no. 2B, pp. 1131-1135, 2002.
    • (2002) Jpn. J. Appl. Phys. , vol.41 , Issue.2 B , pp. 1131-1135
    • Bolognesi, C.1    Dvorak, M.W.2    Matine, N.3    Pitts, O.J.4    Watkins, S.P.5
  • 14
    • 0035715832 scopus 로고    scopus 로고
    • High-speed and low-power InAlAs/InGaAs heterojunction bipolar transistors for dense ultra high speed digital applications
    • Washington D.C.
    • M.Sokolich, S.Thomas III, and C.H.Fields, "High-speed and low-power InAlAs/InGaAs heterojunction bipolar transistors for dense ultra high speed digital applications," 2001 IEEE International Electron Devices Meeting, Washington D.C., pp. 35.5.1-35.5.4, 2001.
    • (2001) 2001 IEEE International Electron Devices Meeting
    • Sokolich, M.1    Thomas III, S.2    Fields, C.H.3
  • 16
    • 0029543896 scopus 로고
    • max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter
    • max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter," GaAs IC Symp., pp. 163-166, 1995.
    • (1995) GaAs IC Symp. , pp. 163-166
    • Yamahata, S.1    Kurishima, K.2    Ito, H.3    Matsuoka, Y.4
  • 17
    • 0029252364 scopus 로고
    • Effects of a compositionally-graded InxGa1-xAs base in abrupt-emitter InP/InGaAs heterojunction bipolar transistors
    • K.Kurishima, H.Nakajima, S.Yamahata, and T.Kobayashi, "Effects of a compositionally-graded InxGa1-xAs base in abrupt-emitter InP/InGaAs heterojunction bipolar transistors," Jpn. J.App.Phys., vol. 34, pp. 1221-1227, 1995.
    • (1995) Jpn. J.App.Phys. , vol.34 , pp. 1221-1227
    • Kurishima, K.1    Nakajima, H.2    Yamahata, S.3    Kobayashi, T.4
  • 19
    • 10644249590 scopus 로고    scopus 로고
    • Device technology for RF front-end circuits in next-generation wireless communications
    • Feb.
    • M. Feng, Shyh-Chang Shen, D. Caruth, and Jian-Jang Huang, "Device Technology for RF Front-End Circuits in Next-Generation Wireless Communications," Proceeding of IEEE, vol. 92, no.2, pp354-375, Feb., 2004
    • (2004) Proceeding of IEEE , vol.92 , Issue.2 , pp. 354-375
    • Feng, M.1    Shen, S.-C.2    Caruth, D.3    Huang, J.-J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.