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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1131-1135

Ultrahigh performance staggered lineup ("type-II") InP/GaAsSb/InP NpN double heterojunction bipolar transistors

(5) Bolognesi, Colombo R a Dvorak, Martin W a Matine, Noureddine a Pitts, Oliver J a Watkins, Simon P a

a SIMON FRASER UNIVERSITY (Canada)

Author keywords

Carbon doping; Cutoff frequency; DHBT; GaAsSb; InP; MOCVD; OEICs; Transistors; heterojunctions

Indexed keywords

BINARY ALLOYS; CARBON; ELECTRIC BREAKDOWN; INTEGRATED OPTOELECTRONICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; TERNARY SYSTEMS;

CUTOFF FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036478687 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1131 Document Type: Conference Paper

Times cited : (35)

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