High-speed InP/InGaAs DHBTs with ballistic collector launcher structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 772-775

  Fujihara, A ^a   Ikenaga, Y ^a   Takahashi, H ^a   Kawanaka, M ^a   Tanaka, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

BALLISTIC COLLECTOR LAUNCHER STRUCTURE; CARRIER TRANSPORT; COLLECTOR; CURRENT BLOCKING PHENOMENA; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035716675     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. Device technology of InP/InGaAs HBTs for 40-Gb/s optical transmission application
2. Optimizing InP HBT technology for 50GHz clock-rate MSI circuits
3. High speed InGaAs/InP composite collector bipolar transistors
4. Minimized corrector current blocking in InP/InGaAs DHBTs grown by MOCVD
5. High-speed InGaAs(P)/InP double-heterojunction bipolar transistors
6. Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors
7. CEO>6V
8. Bistable hot electron transport in InP/InGaAs composite collector heterojunction bipolar transistors
9. A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector
10. Growth and characterization of high-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors by metalorganic chemical vapor deposition
11. Lightwave-communication ICs for 10 Gbit/s and beyond
12. max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter
13. T at 1 mA collector current