Device technology of InP/InGaAs HBTs for 40-Gb/s optical transmission application

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1997, Pages

  Masuda, H ^a   Ouchi, K ^a   Terano, A ^a   Suzuki, H ^a   Watanabe, K ^a   Oka, T ^a   Matsubara, H ^a   Tanoue, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; FREQUENCY RESPONSE; OPTICAL COMMUNICATION EQUIPMENT; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

EMITTER ELECTRODES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031364714     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)