A 40 Gb/s integrated differential PIN+TIA with DC offset control using InP SHBT technology

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 59-62

  Caruth, D ^a   Shen, S C ^a   Chan, D ^a   Feng, M ^a   Schutt Aine J ^a  

^a Xindium Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITORS; COMPUTER SIMULATION; ELECTRIC IMPEDANCE; GAIN CONTROL; JITTER; SEMICONDUCTING INDIUM PHOSPHIDE;

OFFSET CONTROL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036438176     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. J. Mullrich, et al., "High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links," IEEE J. Solid-State Circuits, vol. 35, no. 9, pp.1260-1265, Sept. 2000.
2. A. Huber, et al., "Monolithic, high Transimpedance gain (3.3 kΩ), 40 Gbit/s InP-HBT photoreceiver with differential outputs," Electronics Lett., vol. 35, no. 11, pp. 897-898, May 1999.
3. S.C. Shen, et al., "Performance of InP/InGaAs heterojunction bipolar transistors for 40 Gb/s OEIC applications," in 2002 GaAs ManTech.