Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 292-294

  Hafez, Walid ^a   Lai, Jie Wei ^a   Feng, Milton ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Heterojunction bipolar transistors (HBTs)

Indexed keywords

CURRENT DENSITY; ELECTRON BEAMS; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

EPITAXIAL STRUCTURE; SINGLE HETEROJUNCTION BIPOLAR TRANSISTORS; SUBMICRON EMITTER PROCESS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0041530310     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812530     Document Type: Article

References (11)

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