InP/InGaAs DHBTs with 341-GHz fT at high current density of over 800 kA/cm2

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 776-779

  Ida, Minoru ^a   Kurishima, Kenji ^a   Watanabe, Noriyuki ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ENERGY GAP; FREQUENCIES; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BASE HETEROINTERFACE; CARRIER TRANSIT DELAY; COLLECTOR CURRENT BLOCKING; COLLECTOR HETEROINTERFACE; CUT OFF FREQUENCY; KIRK EFFECT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035718688     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. max for mixed analog digital applications
2. CEO > 6V
3. Fabrication and characterization of high-performance InP InGaAs double-heterojunction bipolar transistors
4. High-performance small InP/InGaAs HBTs with reduced parasitic base-collector capacitance fabricated using a novel base-metal design
5. Performance and stability of MOVPE-grown carbon-doped InP/InGaAs HBT's dehydrogenated by an anneal after emitter mesa formation
6. DC characteristics of InP HBTs after high-temperature and bias stress
7. Advanced InP/InGaAs HBTs technology for low-power lightwave communication circuit applications
8. Device technology for high-yield and high-performance InP/InGaAs DHBTs
9. A 50-GHz static frequency divider and 40-Gb/s MUX/DEMUX using self-aligned selective-epitaxial-growth SiGe HBTs with 8-ps ECL
10. 1-xAs base in abrupt-emitter InP InGaAs heterojunction bipolar transistors