Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 746-753

  Smith, E P G ^a   Venzor, G M ^a   Newton, M D ^a   Liguori, M V ^a   Gleason, J K ^a   Bornfreund, R E ^a   Johnson, S M ^a   Benson, J D ^b   Stoltz, A J ^b   Varesi, J B ^b   Dinan, J H ^b   Radford, W A ^a  

^a RAYTHEON COMPANY   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

Author keywords

Dry etching; HgCdTe; Inductively coupled plasma (ICP); Large format; Liquid phase epitaxy (LPE); Midwavelength infrared (MWIR); Molecular beam epitaxy (MBE); Short wavelength infrared (SWIR)

Indexed keywords

ARRAYS; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; LIQUID PHASE EPITAXY; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PLASMA ETCHING;

HGCDTE; LARGE FORMAT; MIDWAVELENGTH INFRARED (MWIR); SHORT-WAVELENGTH INFRARED (SWIR);

SEMICONDUCTOR MATERIALS;

EID: 21644482656     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0014-8     Document Type: Conference Paper

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