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Volumn 33, Issue 6, 2004, Pages 543-551
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Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches
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NONE
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Author keywords
Anisotropy; Aspect ratio; Electron cyclotron resonance (ECR); Etch bias; Hgcdte; Ion angular distribution (IAD)
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Indexed keywords
ANISOTROPY;
ASPECT RATIO;
AUGER ELECTRON SPECTROSCOPY;
COSINE TRANSFORMS;
ELECTRON CYCLOTRON RESONANCE;
ION BEAM ASSISTED DEPOSITION;
MOLECULAR BEAM EPITAXY;
PHOTODIODES;
PHOTORESISTS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SCANNING ELECTRON MICROSCOPY;
THICK FILMS;
TWINNING;
ETCH BIAS;
HGCDTE;
ION ANGULAR DISTRIBUTION (IAD);
SPUTTER BOMBARDMENT;
TRENCHES;
PLASMA ETCHING;
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EID: 3042792753
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-004-0044-7 Document Type: Conference Paper |
Times cited : (16)
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References (30)
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