Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 543-551

  Benson, J D ^a,b   Stoltz, A J ^a   Varesi, J B ^a   Martinka, M ^c   Kaleczyc, A W ^a   Almeida, L A ^c   Boyd, P R ^a,b   Dinan, J H ^a  

^a U S ARMY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c NONE

Author keywords

Anisotropy; Aspect ratio; Electron cyclotron resonance (ECR); Etch bias; Hgcdte; Ion angular distribution (IAD)

Indexed keywords

ANISOTROPY; ASPECT RATIO; AUGER ELECTRON SPECTROSCOPY; COSINE TRANSFORMS; ELECTRON CYCLOTRON RESONANCE; ION BEAM ASSISTED DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTODIODES; PHOTORESISTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; THICK FILMS; TWINNING;

ETCH BIAS; HGCDTE; ION ANGULAR DISTRIBUTION (IAD); SPUTTER BOMBARDMENT; TRENCHES;

PLASMA ETCHING;

EID: 3042792753     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0044-7     Document Type: Conference Paper

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