HgCdTe/Si materials for long wavelength infrared detectors

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 526-530

  Johnson, S M ^a   Buell, A A ^a   Vilela, M F ^a   Peterson, J M ^a   Varesi, J B ^a   Newton, M D ^a   Venzor, G M ^a   Bornfreund, R E ^a   Radford, W A ^a   Smith, E P G ^a   Rosbeck, J P ^a   De Lyon, T J ^b   Jensen, J E ^b   Nathan, V ^c  

^a RAYTHEON COMPANY   (United States)

^b Hughes Aircraft Co   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Heteroepitaxy; HgCdTe; HgCdTe Si; Infrared detectors; Long wavelength infrared (LWIR); Molecular beam epitaxy (MBE)

Indexed keywords

CARRIER CONCENTRATION; COST EFFECTIVENESS; CRYSTAL LATTICES; ELLIPSOMETRY; EPITAXIAL GROWTH; FEEDBACK CONTROL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTONS; QUANTUM EFFICIENCY; SILICON;

FOCAL PLANE ARRAYS (FPA); HETEROEPITAXY; HGCDTE; HGCDTE/SI; LONG WAVELENGTH INFRARED (LWIR);

INFRARED DETECTORS;

EID: 3042797390     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0041-x     Document Type: Conference Paper

References (14)

1. S.M. Johnson, M.H. Kalisher, W.L. Ahlgren, J.B. James, and C.A. Cockrum, Appl. Phys. Lett. 56, 946 (1990).
2. S.M. Johnson et al., J. Electron. Mater. 22, 835 (1993).
3. Y. Lo, R.N. Bicknell, T.H. Myers, J.F. Schetzina, and H.H. Stadelmaier, J. Appl. Phys. 54, 4238 (1983).
4. R. Sporken, S. Sivananthan, K.K. Mahavadi, G. Monfroy, M. Boukerche, and J.P. Faurie, Appl. Phys. Lett. 55, 1879 (1989).
5. S.M. Johnson, T.J. de Lyon, C.A. Cockrum, W.J. Hamilton, T. Tung, F.I. Gesswein, B.A. Baumgratz, L.M. Ruzicka, O.K. Wu, and J.A. Both, J. Electron. Mater. 24, 467 (1995).
6. T.J. deLyon, J.E. Jensen, M.D. Gorwitz, C.A. Cockrum, S.M. Johnson, and G.M. Venzor, J. Electron. Mater. 28, 705 (1999).
7. K.D. Maranowski, J.M. Peterson, S.M. Johnson, J.B. Varesi, W.A. Radford, A.C. Childs, R.E. Bornfreund, and A.A. Buell, J. Electron. Mater. 30, 619 (2001).
8. J.B. Varesi, R.E. Bornfreund, A.C. Childs, W.A. Radford, K.D. Maranowski, J.M. Peterson, S.M. Johnson, L.M. Giegerich, T.J. de Lyon, and J.E. Jensen, J. Electron. Mater. 30, 566 (2001).
9. J.B. Varesi, A.A. Buell, R.E. Bornfreund, W.A. Radford, J.M. Peterson, K.D. Maranowski, S.M. Johnson, and D.F. King, J. Electron. Mater. 31, 815 (2002).
10. J.B. Varesi, A.A. Buell, J.M. Peterson, R.E. Bornfreund, M.F. Vilela, W.A. Radford, S.M. Johnson, and D.F. King, J. Electron. Mater. 32, 661 (2003).
11. S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Petersen, S.M. Taylor, and M.E. Boyd, J. Vac. Sci. Technol. B 10, 1499 (1992).
12. Y. Chen, G. Brill, and N. Dhar, J. Cryst. Growth 252, 270 (2003).
13. Y. Chen, G. Brill, and N. Dhar, J. Electron. Mater. 32, 723 (2003).
14. M. Carmody et al., in this issue.