SCOPUS 정보 검색 플랫폼

Volumn 30, Issue 6, 2001, Pages 619-622

MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

(10) Maranowski, K D a Peterson, J M c Johnson, S M c Varesi, J B c Childs, A C c Bornfreund, R E c Buell, A A c Radford, W A c De Lyon, T J c Jensen, J E c

a RAYTHEON COMPANY (United States)

b Hughes Aircraft Co (United States)

c NONE

Author keywords

Heteroepitaxy; HgCdTe; HgCdTe Si; Infrared detectors; Molecular beam epitaxy (MBE); MWIR

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; INFRARED DETECTORS; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING SILICON; SUBSTRATES;

CADMIUM ZINC TELLURIDE; DOUBLE LAYER HETEROJUNCTION; MERCURY CADMIUM TELLURIDE; MID-WAVE INFRARED DETECTOR; MORPHOLOGICAL DEFECT; X RAY ROCKING CURVE;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0035359680 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02665844 Document Type: Article

Times cited : (30)

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