Large format IRFPA development on silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5564, Issue , 2004, Pages 34-43

  Dhar, Nibir K ^a   Tidrow, M Z ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

Author keywords

CdSeTe; CdTe Si; HgCdTe; Infrared detectors; LWIR; Molecular beam epitaxy

Indexed keywords

CDSETE; CDTE/SI; HGCDTE; INFRARED DETECTOR; LWIR;

ARRAYS; CADMIUM COMPOUNDS; COMPOSITE MATERIALS; IMAGING TECHNIQUES; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL RESOLVING POWER; OPTIMIZATION; PHOTODETECTORS;

SILICON;

EID: 15944406805     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.562812     Document Type: Conference Paper

References (34)

1. Donald A. Reago, Stuart Horn, James Campbell and Richard Vollmerhausen, SPIE 3701, 108 (1999)
2. P. R. Norton, SPIE 3379, 102 (1998)
3. S. M. Johnson, M.H. Kalisher, W.L. Ahlgren, J.B. James, and C.A. Cockrum, Appl. Phys. Lett. 56, 946 (1990)
4. S. M. Johnson et al. J. Electron. Mater. 22, 835 (1993)
5. J. M. Ballingall, M. L. Wroge, and D. J. Leopold, Appl. Phys. Lett. 48, 1273 (1986)
6. R. D. Feldman, R. F. Austin, A. H. Dayem, and E. H. Westerwick, Appl. Phys. Lett. 49, 797 (1986)
7. N. K. Dhar, C.E.C. Wood, P.R. Boyd, H.K. Pollehn, M. Martinka, J.D. Benson, and J.H. Dinan, J. Electron. Mater. 24, 1041 (1995)
8. R. J. Koestner and H.F. Schaake, J. Vac. Sci. Technol. A 6, 2834 (1988)
9. O.K. Wu, D.N. Jamba, and G.S. Kamath, J. Cryst. Growth 127, 365 (1993)
10. J.M. Arias, M. Zandian, S.H. Shin, W.V. McLevige, J.G. Pasko, and E.E. DeWames, J. Vac. Technol. B9, 1646 (1991)
11. Y. Lo, R.N. Bicknell, T.H. Myers, J.F. Schetzina, and H.H. Stadelmaier, J. Appl. Phys. 54, 4238 (1983)
12. R. Sporken, S. Sivananthan, K.K. Mahadevi, G. Monfroy, M. Boukerche, and J.P. Faurie, Appl. Phys. Lett. 55, 1879 (1989)
13. T.J. deLyon, J.E. Jensen, M.D. Gorwitz, C.A. Cockrum, S.M. Johnson, and G.M. Venzor, J. Electron. Mater. 28, 705 (1999)
14. Y.P. Chen, J.P. Faurie, S. Sivananthan, G.C. Hua, and N. Otsuka, J. Electron. Mater. 24, 475 (1995)
15. T.J. deLyon, D. Rajavel, S.M. Johnson, and C.A. Cockrum, Appl. Phys. Lett. 66, 2119 (1995)
16. N.K. Dhar, C.E.C. Wood, A. Gray, H.Y. Wei, L. Salamanca-Riba, and J. H. Dinan, J. Vac. Sci. Technol B 14, 2366 (1996)
17. S. Rujirawat, L.A. Almeida, Y.P. Chen, S. Sivananthan, and D.J. Smith, Appl. Phys. Lett. 71, 1810 (1997)
18. S. Rujirawat, D.J. Smith, J.P. Faurie, G. Neu, V. Nathan, and S. Sivananthan, J. Electron. Mater. 27, 1047 (1998)
19. N.K. Dhar, P.R. Boyd, M. Martinka, J.H. Dinan, L.A. Almeida, and N. Goldsman, J. Electron. Mater. 29, 748 (2000)
20. Y. Chen, G. Brill, and N.K. Dhar, J. Cryst. Growth 252, 270 (2003)
21. Y. Chen, G. Brill, and N.K. Dhar, J. Electron. Mater. 32, 723 (2003)
22. J. B. Verasi et al. J. Electron. Mater. 32, 661 (2003) and references there in
23. S.M. Johnson et al., J. Electron. Mater. 33, 526 (2004), and references there in
24. M. Carmody et al. J. Electron. Mater. 33, 531 (2004) and references there in
25. G. Brill et al. J. Electron. Mater. 30, 717 (2001)
26. G. Badano et al. J. Electron. Mater. 33, 583 (2004), and references there in
27. P.S. Wijewarnasuriya, M. Zandian, D.D. Edwall, W.V. McLevige, C.A. Chen, J.G. Pasko, G. Hildebrandt, A.C. Chen, J.M. Arias, A.I. D'Souza, S. Rujirawat and S. Sivananthan, J. Electronic. Mat. 27, 546 (1998).
28. T.J. de Lyon, R.D. Rajavel, J.A. Vigil, J.E. Jenson, O.K. Wu, C.A Cockrum, S.M. Johnson, G.M. Venzor, S.L. Bailey, I. Kasai, W.L. Ahlgren and M.S. Smith, J. Electronic. Mat. 27, 550 (1998).
29. S.M. Johnson, D.R. Shiger, J.P.Rosbeck, J.M. Peterson, S.M. Taylor, M.E. Boyd, J. Vac. Sci. Technol. B10, 1499 (1992).
30. P.S. Wijewarnasuriya, M. Zandian, D.B. Young, J. Waldrop, D.D. Edwall, W.V. McLevige, D. Lee and J.M. Arias, J. Electronic. Mat. 28, 649 (1999).
31. S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Peterson, S.M. Taylor and M.E. Boyd; J. Vac. Sci. Technol, B10, 1499 (1992).
32. M.C. Chen, R.S. List, D. Chandra, M.J. Bevan, L. Colombo, and H.F. Schaake; J. Electronic. Mat. 25, 1375 (1996).
33. N.K. Dhar, M. Zandian, J. G. Pasko, J.M. Arias, and J.H. Dinan, Appl. Phys. Lett. 70, 1730 (1997)
34. J. Bajaj et al., SPIE 2948, 42 (200).