Control and growth of Middle Wave Infrared (MWIR) Hg(1-x)Cd xTe on Si by molecular beam epitaxy

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 898-904

  Vilela, M F ^a   Buell, A A ^a   Newton, M D ^a   Venzor, G M ^a   Childs, A C ^a   Peterson, J M ^a   Franklin, J J ^a   Bornfreund, R E ^a   Radford, W A ^a   Johnson, S M ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

HgCdTe; HgCdTe Si; Infrared photodiodes; Large format focal plane arrays (FPAS); Middle wave infrared (MWIR); Molecular beam epitaxy (MBE)

Indexed keywords

COST EFFECTIVENESS; MOLECULAR BEAM EPITAXY; PHOTODIODES; PROBABILITY DENSITY FUNCTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM WELLS; SILICON;

HGCDTE; HGCDTE/SI; INFRARED PHOTODIODES; LARGE-FORMAT FOCAL PLANE ARRAYS (FPA); MIDDLE WAVE INFRARRED (MWIR);

MERCURY COMPOUNDS;

EID: 21644480164     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0039-z     Document Type: Conference Paper

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