Scalability of dry-etch processing for small unit-cell HgCdTe focal-plane arrays

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 821-826

  Smith, E P G ^a   Venzor, G M ^a   Goetz, P M ^a   Varesi, J B ^a   Pham, L T ^a   Patten, E A ^a   Radford, W A ^a   Johnson, S M ^a   Stoltz, A J ^b   Bensen, J D ^b   Dinan, J H ^b  

^a RAYTHEON COMPANY   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

Author keywords

Dry etching; Etch lag; HgCdTe; Scalability; Very long wavelength infrared (VLWIR)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIODES; DRY ETCHING; INFRARED RADIATION;

FOCAL-PLANE ARRAYS (FPA);

MERCURY COMPOUNDS;

EID: 0043269193     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0077-3     Document Type: Conference Paper

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