Inductively coupled plasma etching of HgCdTe

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 816-820

  Smith, E P G ^a   Gleason, J K ^a   Pham, L T ^a   Patten, E A ^a   Welkowsky, M S ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

Dry etching; Electron cyclotron resonance; HgCdTe; Inductively coupled plasma

Indexed keywords

DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; INDUCTIVELY COUPLED PLASMA; SCANNING ELECTRON MICROSCOPY;

CHAMBER PRESSURE;

MERCURY COMPOUNDS;

EID: 0041766135     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0076-4     Document Type: Conference Paper

References (18)

1. P. O'Dette, G. Tarnowski, V. Lukah, M. Krueger, and P. Lovecohio, J. Electron. Mater. 28, 821 (2002).
2. J.B. Varesi, A.A. Buell, R.E. Bornfreund, W.A. Radford, J.M. Peterson, K.D. Maranowski, S.M. Johnson, and D.F. King, J. Electron. Mater. 31, 815 (2002).
3. J.B. Varesi, R.E. Bornfreund, A.C. Childs, W.A. Radford, K.D. Maranowski, J.M. Peterson, S.M. Johnson, L.M. Giegerich, T.J. de Lyon, and J.E. Jensen, J. Electron. Mater. 30, 566 (2002).
4. G. Brill, S. Velicu, P. Boieriu, Y. Chen, N.K. Dhar, T.S. Lee, Y. Selamet, and S. Sivananthan, J. Electron. Mater. 30, 717 (2001).
5. R.C. Kellar, M. Seelmann-Eggebert, and H.J. Richter, J. Electron. Mater. 24, 1155 (1995).
6. R.C. Kellar, M. Seelmann-Eggebert, and H.J. Richter, J. Electron. Mater. 25, 1270 (1996).
7. R.J. Shul, G.B. McClellan, R.D. Briggs, D.J. Rieger, S.J. Pearton, C.R. Abernathy, J.W. Lee, C. Constantine, and C. Barratt, J. Vac. Sci. Technol. A 15, 633 (1997).
8. C.R. Eddy, E.A, Dobisz, J.R. Meyer, and C.A. Hoffman, J. Vac. Sci. Technol. A 11, 1763 (1993)
9. C.R. Eddy, D. Leonhardt, V.A. Shamamian, R.T. Holm, O.J. Glembrocki, J.R. Meyer, C.A. Hoffman, and J.E. Butler, MAS Proc. 450, 275 (1997).
10. N. Neswal, K.H. Gresslehner, K. Lischka, and K. Lubke, J. Vac. Sci. Technol. B 3, 551 (1993).
11. R. Muniandy, R. Boylan, R. Chin, N. Bell, and R. Sankman, J. Vac. Sci. Technol. B 15, 1913 (1997).
12. L. Zhang, L.F. Lester, R.J. Shul, C.G. Willison, and R.P. Leavitt, J. Vac. Sci. Technol. B 17, 965 (1999).
13. M.R. Rakhshandehroo, J.W. Weigold, W.C. Tian, and S.W. Pang, J. Vac. Sci. Technol. B 16, 2849 (1998).
14. J. Lee, H. Cho, D.C. Hays, C.R. Abernathy, S.J. Pearton, R.J. Shul, G.A. Vawter, and J. Han, IEEE Quant. Electron. 4, 557 (1998).
15. J.H. Dinan et al., IEEE/CPMT Int. Elect. Manuf. Symp. vol. 19 (Piscataway, NJ: IEEE, 1996), p. 205.
16. A.J. Stoltz, J.D. Benson, M. Thomas, P.R. Boyd, M. Martinka, and J.H. Dinan, J. Electron. Mater. 31, 1156 (2002).
17. S.J. Pearton, Proc. SPIE 2999, 118 (1997).
18. Oxford Instruments, Bristol, U.K.