Electron transport in thin SOI, strained-SOI and GeOI MOSFET by Monte-Carlo simulation

Solid-State Electronics

Volumn 49, Issue 7, 2005, Pages 1090-1097

  Barraud, S ^a   Clavelier, L ^a   Ernst, T ^a  

^a CEA LETI   (France)

Author keywords

Ballistic; Germanium; Germanium on insulator; Monte Carlo; MOSFET; Silicon on insulator; Strained silicon on insulator

Indexed keywords

BALLISTICS; COMPUTER SIMULATION; ELECTRON TRANSITIONS; GERMANIUM; MONTE CARLO METHODS; SILICON ON INSULATOR TECHNOLOGY; TRANSPORT PROPERTIES;

GERMANIUM-ON-INSULATOR; MOTE-CARLO; SILICON-ON-INSULATOR (SOI); STRAINED-SILICON-ON-INSULATOR;

MOSFET DEVICES;

EID: 21444441998     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.04.016     Document Type: Article

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