Increase in switching charge of ferroelectric SrBi2Ta2O9 thin films with polarization reversal

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 B, 2000, Pages 5481-5484

  Okamura, Soichiro ^a   Takaoka, Masaki ^a   Nishida, Takashi ^a   Shiosaki, Tadashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC FIELD EFFECTS; FATIGUE OF MATERIALS; HYSTERESIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS;

FERROELECTRIC STRONTIUM BISMUTH TANTALUM THIN FILMS; POLARIZATION REVERSAL; SWITCHING CHARGE;

FERROELECTRIC THIN FILMS;

EID: 0034262860     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5481     Document Type: Article

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