Highly Manufacturable and Reliable 32Mb FRAM Technology with Novel BC and Capacitor Cleaning Process

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 169-170

  Song, Y J ^a   Joo, H J ^a   Jang, N W ^a   Kim, H H ^a   Park, J H ^a   Kang, H Y ^a   Lee, S Y ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CLEANING; RANDOM ACCESS STORAGE;

CAPACITOR CLEANING;

VLSI CIRCUITS; FERROELECTRIC RAM;

150 ° C; CLEANING PROCESS; CLEANING TECHNOLOGY; SENSING WINDOWS; STANDALONE APPLICATIONS; ULTRASONIC TREATMENTS;

EID: 0141761512     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. K. N Kim, Integrated Ferroelectrics, p. 21, 2001.
2. H. H Kim, et al., Symp. on VLSI Tech. Dig., p. 210, 2002.
3. T. S. Moise, et al, Tech. Dig. IEDM, p. 535, 2002.