0.18 μm SBT-Based Embedded FeRAM Operating at a Low Voltage of 1.1V

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 171-172

  Nagano, Y ^a   Mikawa, T ^a   Kutsunai, T ^a   Hayashi, S ^a   Nasu, T ^a   Natsume, S ^a   Tatsunari, T ^a   Ito, T ^a   Goto, S ^a   Yano, H ^a   Noma, A ^a   Nagahashi, K ^a   Miki, T ^a   Sakagami, M ^a   Izutsu, Y ^a   Nakakuma, T ^a   Hirano, H ^a   Iwanari, S ^a   Murakuki, Y ^a   Yamaoka, K ^a   Goho, Y ^a   Judai, Y ^a   Fujii, E ^a   Sato, K ^a   more..

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; ELECTRIC POTENTIAL; EMBEDDED SYSTEMS; HYDROGEN;

DATA RETENTION;

RANDOM ACCESS STORAGE;

DATA RETENTION TIME; HIGH RELIABILITY; HYDROGEN BARRIERS; LOW VOLTAGE OPERATION; LOW VOLTAGES; OPERATION RELIABILITY; RELIABILITY CHARACTERISTICS; VERY LOW VOLTAGE;

EID: 0141426790     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. D.J. Jung et al., IEDM Tech. Dig., 1999, pp. 279-282.
2. B. Yang et al., Appl. Phys. Lett., vol. 79, No. 13, pp. 2064-2066, September 2001.
3. S.Y. Lee et al., IEDM Tech. Dig., 2002, pp. 547-550.