Noble FeRAM Technologies with MTP Cell Structure and BLT Ferroelectric Capacitors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 835-838

  Oh, S H ^a   Hong, S K ^a   Noh, K H ^a   Kweon, S Y ^a   Kim, N K ^a   Yang, Y H ^a   Kim, J G ^a   Seong, J Y ^a   Jang, I W ^a   Park, S H ^a   Bang, K H ^a   Lee, K N ^a   Jeong, H J ^a   Son, J H ^a   Lee, S S ^a   Choi, E S ^a   Sun, H J ^a   Yeom, S J ^a   Ban, K D ^a   Park, J W ^a   Park, G D ^a   Song, S Y ^a   Shin, J H ^a   Lee, S I ^a   Park, Y J ^a   more..

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DATA STORAGE EQUIPMENT; ELECTRIC RESISTANCE; ELECTROMAGNETIC WAVE POLARIZATION; FERROELECTRIC MATERIALS; LITHOGRAPHY; ROBUSTNESS (CONTROL SYSTEMS); SIGNAL PROCESSING; WIRELESS TELECOMMUNICATION SYSTEMS;

FERROELECTRIC CAPACITORS; FERROELECTRIC FILMS;

RANDOM ACCESS STORAGE;

EID: 17644436357     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S.Y. Lee and Kinam Kim, IEDM Tech. Dig., pp547-550, 2002
2. Sang-Woo Lee, et al., Jpn. J. Appl. Phys., vol. 41, pp. 6749-6753, 2002
3. B.Yang, et al., IEDM Tech. Dig., pp791-794, 2001
4. K.-H. Noh, et al., Jpn. J. Appl. Phys., vol. 42, pp.2096-2099, 2003