Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density feram applications

Integrated Ferroelectrics

Volumn 21, Issue 1-4, 1998, Pages 367-379

  Hintermaier, Frank ^a   Hendrix, Bryan ^b   Desrochers, Debra ^b   Roeder, Jeffrey ^b   Baum, Thomas ^b   Van Buskirk, Peter ^b   Bolten, Dirk ^c   Grossmann, Michael ^c   Lohse, Oliver ^c   Schumacher, Marcus ^c   Waser, Rainer ^c   Cerva, Hans ^a   Dehm, Christine ^a   Fritsch, Elke ^a   Hönlein, Wolfgang ^a   Mazuré, Carlos ^a   Nagel, Nicolas ^a   Thwaite, Peter ^a   Wendt, Hermann ^a  

^a SIEMENS AG   (Germany)

^b Advanced Technology Materials Inc   (United States)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Bi precursor; Bi(thd)3; Ferroelectric capacitor; MOCVD; Pt electrode; SrBi2Ta2O9

Indexed keywords

ANNEALING; DATA STORAGE EQUIPMENT; ELECTRODES; FERROELECTRIC DEVICES; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRONTIUM COMPOUNDS; THIN FILMS;

HIGH DENSITY FERROELECTRIC MEMORY DEVICES; RUN-TO-RUN REPEATABILITY;

CAPACITORS;

EID: 0032315440     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808202077     Document Type: Article

References (6)

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