Frequency dependence of the coercive voltage of ferroelectric thin films

Materials Research Society Symposium - Proceedings

Volumn 596, Issue , 2000, Pages 291-299

  Waser, R ^a   Lohse, O ^b   Grossmann, M ^b   Boettger, U ^b   Bolten, D ^b   Tiedke, S ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c AIXACCT SYSTEMS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIELECTRIC LOSSES; DIELECTRIC RELAXATION; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; HYSTERESIS; MATHEMATICAL MODELS; POLARIZATION; SEMICONDUCTING LEAD COMPOUNDS; STRONTIUM COMPOUNDS;

COERCIVE VOLTAGE; FERROELECTRIC CAPACITOR; FERROELECTRIC MEMORY DEVICE; FERROELECTRIC POLARIZATION; FERROELECTRIC RELAXATION; FERROELECTRIC THIN FILM; LEAD ZIRCONATE TITANATE; STRONTIUM BISMUTH TANTALATE;

THIN FILMS;

EID: 0033696218     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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