Auger and radiative recombination coefficients in 0.55-eV InGaAsSb

Journal of Applied Physics

Volumn 97, Issue 2, 2005, Pages

  Kumar, R J ^a   Borrego, J M ^a   Dutta, P S ^a   Gutmann, R J ^a   Wang, C A ^b   Nichols, G ^c  

^a Rensselaer Polytechnic Institute   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONIDE-BASED SEMICONDUCTORS; LOW-LEVEL INJECTION CONDITIONS; RADIO-FREQUENCY PHOTOREFLECTANCE TECHNIQUE; RECOMBINATION COEFFICIENTS;

AUGER ELECTRON SPECTROSCOPY; CONCENTRATION (PROCESS); DOPING (ADDITIVES); EXTRACTION; LATTICE CONSTANTS; PARAMETER ESTIMATION; PHOTOREFRACTIVE MATERIALS; RADIATION EFFECTS; SOLID STATE LASERS; SURFACE PHENOMENA;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 19944433969     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1828609     Document Type: Article

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