High-speed dynamics of GaAsSb vertical-cavity lasers

IEEE Photonics Technology Letters

Volumn 14, Issue 4, 2002, Pages 438-440

  Kilper, D C ^a   Quochi, F ^a   Cunningham, J E ^a   Dinu, M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Optical communication; Quantum well lasers; Semiconductor epitaxial layers; Surface emitting lasers

Indexed keywords

BANDWIDTH; FREQUENCY RESPONSE; MODULATION; OPTICAL COMMUNICATION; QUANTUM THEORY; RELAXATION OSCILLATORS; SEMICONDUCTING GALLIUM COMPOUNDS;

SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0036538912     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.992570     Document Type: Article

References (14)

1. 1200 nm GaAs-based vertical cavity lasers employing GaInNA's multiquantum well active regions
2. Room temperature low-threshold CW operation of 1.23 μm GaAsSb VCSEL's on GaAs substrates
3. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm
4. Characterization of GaAsSb/GaAs quantum wells for 1.3 μm VCSELs
5. Continuous-wave operation of a 1.3 μm GaAsSb/GaAs quantum-well vertical-cavity surface-emitting laser at room temperature
6. Amplitude squeezing in a pump-noise-suppressed laser oscillator
7. Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapor deposition on GaAs substrates
8. Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSEL
9. Anomalous above-threshold spontaneous emission in gain-guided vertical-cavity surface-emitting lasers
10. Beam propagation model for vertical-cavity surface-emitting lasers: Threshold properties
11. Spatial hole-burning and self-focusing in vertical-cavity surface-emitting laser diodes
12. Charge-separation effects in 1.3 mm GaAsSb type-II quantum-well laser gain
13. Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers
14. Continuous-wave operation of 1.30 μm GaAsSb/GaAs VCSELs