MBE growth of room-temperature InAsSb mid-infrared detectors

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 609-613

  Marcadet, X ^a   Rakovska, A ^a   Prevot, I ^a   Glastre, G ^a   Vinter, B ^a   Berger, V ^a  

^a THALES   (France)

Author keywords

A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials; B3. Infrared devices

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ANTIMONIDES; SHOCKLEY-READ RECOMBINATIONS; TIME-RESOLVED PHOTOCONDUCTIVITY;

INFRARED DETECTORS;

EID: 0035398741     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00782-5     Document Type: Conference Paper

References (11)

1. Photodetectors: Materials and devices V