Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 605-608

  Lin, C ^a   Zheng, Y L ^a   Li, A Z ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Antimonides; B3. Infrared devices

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ANTIMONIDES; SOLID SOURCE MOLECULAR BEAM EPITAXY;

INFRARED DETECTORS;

EID: 0035398819     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00781-3     Document Type: Conference Paper

References (4)