Antimonide-based devices for thermophotovoltaic applications

IEEE Transactions on Electron Devices

Volumn 46, Issue 10, 1999, Pages 2154-2161

  Hitchcock, Collin W ^a   Gutmann, Ronald J ^a   Borrego, Jose M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM COMPOUNDS; TERNARY SYSTEMS;

GALLIUM ANTIMONIDE; GALLIUM INDIUM ANTIMONIDE TERNARY DEVICE; GALLIUM INDIUM ARSENIDE ANTIMONIDE QUATERNARY DEVICE; THERMOPHOTOVOLTAIC DEVICE; THICK EMITTER DEVICE;

PHOTOVOLTAIC CELLS;

EID: 0033310646     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.792011     Document Type: Article

References (22)

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