Effects of indium segregation and well-width fluctuations on optical properties of InGaN/GaN quantum wells

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 2, 2001, Pages 453-456

  Forstner J ^a   Knorr, A ^a   Kuckenburg, S ^a   Meier, T ^a   Koch, S W ^a   Giessen, H ^b   Linden, S ^b   Kuhl, J ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035540039     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200009)221     Document Type: Article

References (10)

1. A. SATAKE and Y. MASUMOTO, Phys. Rev. B. 57, 2041 (1998)
2. A. HANGLEITER, J. S. IM, H. KOLLMER, S. HEPPEL, J. OFF, and F. SCHOLZ, MRS J. Nitride Semicond. Res. 3, 15 (1998)
3. F. BERNARDINI, V. FIORENTINI, and D. VANDERBILT, Phys. Rev. B. 56, 10024 (1997)
4. S. CHICHIBU, T. SOTA, K. WADA, and S. NAKAMURA, J. Vac. Sci. Technol. B 16, 2204 (1998)
5. M. SUZUKI and T. UENOYAMA, Phys. Rev. B 52, 8132 (1995)
6. A. F. WRIGHT, J. Appl. Phys. 82, 2833 (1997)
7. A. D. BYKHOVSKI, V. V. KAMINSKI, M. S. SUR, Q. C. CHEN, and M. A. KHAN, Appl. Phys. Lett. 68, 818 (1996)
8. J. A. DAVIDSON, P. DAWSON, T. WANG, T. SUGAHARA, J. W. ORTON, and S. SAKAI, Semicond. Sci. Technol. 15, 497 (2000)
9. A. D. ANDREEV, J. R. DOWNES, D. A. FAUX, and E. P. O'REILLY, J. Appl. Phys. 86, 297 (1999)
10. A. D. ANDREEV and E. P. O'REILLY, Thin Solid Films 364, 291 (2000)