Directional current switch using silicon single electron transistors controlled by charge injection into silicon nano-crystal floating dots

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 371-374

  Takahashi, Nobuyoshi ^a   Ishikuro, Hiroki ^a   Hiramoto, Toshiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; OSCILLATIONS; PHASE CONTROL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSISTORS;

CHARGE INJECTION; COULOMB BLOCKADE OSCILLATIONS; DIRECTIONAL CURRENT SWITCH; GATE ELECTRODE; NANOCRYSTAL FLOATING DOTS; SINGLE ELECTRON TRANSISTORS;

SEMICONDUCTOR SWITCHES;

EID: 0033332339     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)