Influence of oxidation temperature on Si-single electron transistor characteristics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2869-2873

  Namatsu, H ^a   Watanabe, Y ^a   Yamazaki, K ^a   Yamaguchi, T ^a   Nagase, M ^a   Ono, Y ^a   Fujiwara, A ^a   Horiguchi, S ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRON BEAM LITHOGRAPHY; ELECTRON CYCLOTRON RESONANCE; ETCHING; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; OSCILLATIONS; OXIDATION; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS; SUBSTRATES; VOLTAGE MEASUREMENT;

ROOM TEMPERATURE; SINGLE-ELECTRON TRANSISTORS (SET);

TRANSISTORS;

EID: 0942267529     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1629297     Document Type: Conference Paper

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