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Journal of Applied Physics

Volumn 87, Issue 8, 2000, Pages 3730-3735

Surfactant controlled growth of GalnP by organometallic vapor phase epitaxy

(6) Lee, R T a Shurtleff, J K a Fetzer, C M a Stringfellow, G B a Lee, S b Seong, T Y b

a UNIVERSITY OF UTAH (United States)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342417494 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.372408 Document Type: Article

Times cited : (31)

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