Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy

Journal of Crystal Growth

Volumn 234, Issue 2-3, 2002, Pages 327-336

  Shurtleff, J K ^a   Lee, R T ^a   Fetzer, C M ^a   Stringfellow, G B ^a   Lee, S ^b   Seong, T Y ^b  

^a University of Utah   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

A1. Interfaces; A1. Low dimensional structures; A1. Surface processes; A3. Organometallic vapor phase epitaxy; B2. Semiconductor III V materials; B2. Semiconductor indium gallium phosphide

Indexed keywords

INTERFACES (MATERIALS); LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; SURFACE ACTIVE AGENTS;

PHOTOABSORPTION;

HETEROJUNCTIONS;

EID: 0036131749     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01713-4     Document Type: Article

References (24)

1. Ordering in III/V semiconductor alloys
2. Compositional modulation and ordering in semiconductors
3. Efthimios Kaxiras