Effects of substrate orientation and surface reconstruction on patterned substrate OMVPE of GaAs

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 118-128

  Reichert, W ^a   Cohen, R M ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SUBSTRATES;

SUBSTRATE MISORIENTATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033886988     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0106-4     Document Type: Article

References (23)

1. R. Nötzel, J. Menninger, M. Ramsteiner, A. Trampert, H.-P. Schönherr, L. Däweritz, and K.H. Ploog, J. Cryst. Growth 175/176, 1114 (1997).
2. Y. Kim, Y.K. Park, M.-S. Kim, J.-M. Kang, S.-I. Kim, S.-M. Hwang, and S.-K. Min, Appl. Phys. Lett. 67, 1871 (1995).
3. H. Okumura, N. Saito, J.-I. Kusano, T. Aida, F. Sato, and K. Takizawa, Jpn. J. Appl. Phys. 37, L484 (1998).
4. S. Ando, N. Kobayashi, and H. Ando, J. Cryst. Growth 145, 302 (1994).
5. L. Silvestre, A. Ougazzaden, D. Delprat, A. Ramdane, C. Daguet, and G. Patriarche, J. Cryst. Growth 170, 639 (1997).
6. K. Goto, M. Takemi, T. Miura, A. Takemoto, and Y. Mihashi, J. Electron. Mater. 25, 411 (1996).
7. T. Fukui, H. Saito, M. Kasu, and S. Ando, J. Cryst. Growth 124, 493 (1992).
8. H. Asai, J. Cryst. Growth 80, 425 (1987).
9. A. Nutsch, B. Dahlheimer, N. Döhr, H. Kratzer, R. Lukas, B. Torabi, G. Tränkle, G. Abstreiter, and G. Weimann, J. Cryst. Growth 188, 275 (1998).
10. Y. Hayakawa, S. Iida, T. Sakurai, H. Yanagida, M. Kikuzawa, T. Koyama, M. Kumagawa, J. Cryst. Growth 169, 613 (1996).
11. M. Kawabe and T. Sugaya, Jpn. J. Appl. Phys. 28, L 1077 (1989).
12. X.-Q. Shen and T. Nishinaga, Jpn. J. Appl. Phys. 32, L1117 (1993).
13. S.D. Hersee, E. Barbier, and R. Blondeau, J. Cryst. Growth 77, 310 (1986).
14. S.H. Jones, L.K. Seidel, K.M. Lau, and M. Harold, J. Cryst. Growth 108, 73 (1991).
15. R. Nötzel, M. Ramsteiner, J. Menninger, A. Trampert, H.-P. Schönherr, L. Däweritz, and K.H. Ploog, J. Appl. Phys. 80, 4108 (1996).
16. S. Schelhase, J. Böttcher, R. Gibis, H. Künzel, and A. Paraskevopolous, J. Cryst. Growth 164, 339 (1996).
17. C.C. Matthai and G.A. Moran, Appl. Surf. Sci. Proc., 6th Int. Conf. on Form. of Semicond. Interf. (Amsterdam, the Netherlands: Elsevier Sci. B.V., 1997), pp. 653.
18. H.H. Farrell and C.J. Palmstrøm, J. Vac. Sci. Technol. B 8, 4108 (1990).
19. T. Hashizume, Q.K. Xue, J. Zhou, A. Ichimiya, and T. Sakurai, Phys. Rev. Lett. 73, 2208 (1994).
20. F.J. Lamelas, P.H. Fuoss, D.W. Kisker, G.B. Stepehnson, P. Imperatori, and S. Brennan, Phys. Rev. B 49, 1957 (1994).
21. D.K. Biegelsen, R.D. Bringans, J.E. Northrup, and L.-E. Swartz, Phys. Rev. B 41, 5701 (1990).
22. J.R. Creighton and K.C. Baucom, Surface Science 409, 372 (1998).
23. Y. Kobayashi and N. Kobayashi, J. Electron. Mater. 25, 691 (1996).