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Volumn 235, Issue 1-4, 2002, Pages 15-24

Isoelectronic surfactant-induced surface step structure and correlation with ordering in GaInP

(4) Jun, S W a Stringfellow, G B a Shurtleff, J K a Lee, R T a

Author keywords

A1. Interfaces; A1. Surface processes; A1. Surface structure; A3. Organometallic vapor phase epitaxy; B2. Semiconducting indium gallium phosphide

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

ISOELECTRONIC SURFACTANTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036467288 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01738-9 Document Type: Article

Times cited : (26)

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