Sb-flow-rate dependence of triple-period (TP)-A-type atomic-ordering in Ga0.5In0.5P grown by metalorganic-vapor-phase epitaxy

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 31-36

  Suzuki, T ^a   Ichihashi, T ^a   Kurihara, K ^a   Nishi, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ANTIMONY; SUBSTRATES;

ATOMIC ORDERING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034503930     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00644-8     Document Type: Article

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