SCOPUS 정보 검색 플랫폼

Volumn 233, Issue 3, 2001, Pages 490-502

Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth

(8) Lee, R T a Fetzer, C M a Jun, S W a Chapman, D C a Shurtleff, J K a Stringfellow, G B a Ok, Y W b Seong, T Y b

a Department of Electrical and Computer Engineering (United States)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

A1. low dimensional structures; A1. surface processes; A1. surface structure; A3. organometallic vapor phase epitaxy; B2. semiconducting indium gallium phosphide

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION IN SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SUBSTRATES; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE;

ISOELECTRONIC SURFACTANTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035546562 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01595-0 Document Type: Article

Times cited : (16)

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