4.5-kV injection-enhanced gate transistors (IEGTs) with high turn-off ruggedness

IEEE Transactions on Electron Devices

Volumn 51, Issue 4, 2004, Pages 636-641

  Ogura, Tsuneo ^a   Ninomiya, Hideaki ^a   Sugiyama, Koichi ^a   Inoue, Tomoki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Insulated gate bipolar transistors (IGBTs); Power semiconductor devices; Semiconductor device breakdown

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FAILURE ANALYSIS; INSULATED GATE BIPOLAR TRANSISTORS; MATHEMATICAL MODELS;

INJECTION ENHANCED GATE TRANSISTORS; SATURATION VOLTAGE; SEMICONDUCTOR DEVICE BREAKDOWN; TURN OFF SWITCHING LOSS;

GATES (TRANSISTOR);

EID: 1942487819     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.825111     Document Type: Article

References (19)

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