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Volumn , Issue , 1994, Pages 163-170
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Ultimate limits of an IGBT (MCT) for high voltage applications in conjunction with a diode
a
a
SIEMENS AG
(Germany)
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Author keywords
[No Author keywords available]
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Indexed keywords
BIPOLAR TRANSISTORS;
ELECTRIC CURRENTS;
ELECTRIC LOADS;
ELECTRIC LOSSES;
ELECTRONICS PACKAGING;
ENERGY DISSIPATION;
MOS DEVICES;
SEMICONDUCTOR DIODES;
SWITCHING FUNCTIONS;
TEMPERATURE CONTROL;
THYRISTORS;
BLOCKING VOLTAGE;
CURRENT DENSITY;
FORWARD VOLTAGE DROP;
FREE WHEELING DIODE;
INSULATED GATE BIPOLAR TRANSISTORS;
MOS CONTROLLED THYRISTOR;
SNUBBER CIRCUITS;
SWITCHING MODES;
TEMPERATURE LIMITS;
SEMICONDUCTOR DEVICES;
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EID: 0028728088
PISSN: None
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (24)
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References (30)
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