High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 47-50

  Ogura, Tsuneo ^a   Sugiyama, Koichi ^a   Hasegawa, Shigeru ^a   Matsuda, Hideo ^a   Ohashi, Hiromichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC NETWORK PARAMETERS; GATES (TRANSISTOR); POWER ELECTRONICS;

INJECTION ENHANCED GATE TRANSISTORS (IEGT); TURN OFF CURRENT CAPABILITY;

BIPOLAR TRANSISTORS;

EID: 0031629473     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)