6.5 kV-modules using IGBTs with field stop technology

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 121-124

  Bauer, J G ^a   Auerbach, F ^a   Porst, A ^a   Roth, R ^a   Ruething, H ^a   Schilling, O ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SHORT CIRCUIT CURRENTS;

FIELD STOP STRUCTURES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034833323     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. 6.5kV IGBT-modules
2. 6.SkV IGBT-modules
3. Experimental study on plasma engineering in 6500V IGBTs
4. Advanced IGBT conveners with 4.SkV and 6.SkV semiconductor devices
5. The field stop IGBT (FS IGBT) - A new power device concept with a great improvement potential
6. Carrier lifetime characterization using an optimized free carrier absorption technique
7. Improvement of the diode characteristics using emitter-controlled principles (EMCON-Diode)