Progress in development of the 3.5 kV high voltage IGBT/diode chipset and 1200 A module applications

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 225-228

  Brunner, Heinrich ^a   Hierholzer, Martin ^a   Laska, Thomas ^a   Porst, Alfred ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES;

DIODE CHIPSET; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0030658211     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)